A CMOS class-E power amplifier of 40-% PAE at 5 GHz for constant envelope modulation system

Y Yamashita,Daisuke Kanemoto,Haruichi Kanaya,R K Pokharel,K Yoshida

Silicon Monolithic Integrated Circuits in RF Systems（2013）

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摘要

This paper describes the design of a high-efficient class-E power amplifier (PA) for 5-GHz wireless transmitter applications using constant envelope modulation scheme in a 0.18-μm CMOS technology. The proposed class-E PA employs injection-locking technique to reduce required input power. Furthermore, cascode topology is utilized for the proposed PA in order to reduce device stress and parasitic capacitances. The proposed PA delivers 15.4-dBm saturated output power at 5.0 GHz with 40.6-% maximum power-added efficiency (PAE) for measurement.

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关键词

cmos analogue integrated circuits,mmic power amplifiers,field effect mmic,microwave measurement,radio transmitters,cmos class-e power amplifier,cmos technology,constant envelope modulation system,device stress reduction,efficiency 40 percent,frequency 5 ghz,high-efficient class-e power amplifier,injection-locking technique,maximum power-added efficiency,parasitic capacitances,size 0.18 mum,wireless transmitter applications,cmos,cascode,class-e,injection-locking (il),power amplifier (pa),power-added efficiency (pae)

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