Layered HfSiON-based tunnel stacks for voltage reduction and improved reliability in TANOS memories

G Molas,M Bocquet,J P Colonna,V Vidal,R Kies,H Grampeix,F D Martin,A M Papon,H Dansas,P Brianceau,C Licitra,J P Barnes,G Pananakakis,Gerard Ghibaudo,B De Salvo

VLSI Technology Systems and Applications（2010）

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摘要

In this work we present the integration of Band Engineered TANOS-like memories using HfSiON in the tunnel stack to boost the programming efficiency and improve cycling. An accurate correlation analysis between the gate-stack material physical properties and the memory performances is presented. In particular, the importance of the nitridation step of HfSiON on the memory retention characteristics at high temperature is suggested.

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关键词

alumina,correlation methods,elemental semiconductors,hafnium compounds,integrated circuit reliability,random-access storage,silicon,silicon compounds,tantalum compounds,hfsion,tanos memory reliability,tan-al2o3-si3n4-sio2-si,band engineered tanos-like memory reliability,correlation analysis,gate-stack material physical property,layered hfsion-based tunnel stacks,memory retention characteristics,voltage reduction,stress,logic gates,physical properties,tin,decision support systems,refractive index,voltage,photonics

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