Effects of nonlinear losses and design geometry on gain in silicon waveguides with erbium doped regions
OFC), collocated National Fiber Optic Engineers Conference, 2010 Conference(2010)
摘要
We investigate the effects of design geometry and nonlinear losses on gain in silicon with erbium-doped regions. Multi-trench designs distribute intensity more uniformly and reduce the nonlinear losses including up conversion and excited state absorptions.
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关键词
elemental semiconductors,erbium,excited states,integrated optics,nonlinear optics,optical design techniques,optical losses,optical waveguides,silicon,si:er,design geometry,erbium doped regions,excited state absorptions,multitrench designs,nonlinear losses,optical gain,silicon waveguides,absorption,stimulated emission,gain
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