Effects of nonlinear losses and design geometry on gain in silicon waveguides with erbium doped regions

OFC), collocated National Fiber Optic Engineers Conference, 2010 Conference(2010)

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摘要
We investigate the effects of design geometry and nonlinear losses on gain in silicon with erbium-doped regions. Multi-trench designs distribute intensity more uniformly and reduce the nonlinear losses including up conversion and excited state absorptions.
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关键词
elemental semiconductors,erbium,excited states,integrated optics,nonlinear optics,optical design techniques,optical losses,optical waveguides,silicon,si:er,design geometry,erbium doped regions,excited state absorptions,multitrench designs,nonlinear losses,optical gain,silicon waveguides,absorption,stimulated emission,gain
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