a-Plane GaN light emitting diodes on self-assembled Ni nano-islands

Xiaoli Wang,Wenting Hou,Liang Zhao,Shi You,Theeradetch Detchprohm,Christian Wetzel

Lester Eastman Conference High Performance Devices（2012）

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摘要

This paper demonstrated the improvement of the crystalline quality of re-grown a-GaN on GaN nanorod templates and employed these templates for re-grown blue and green a-plane GaN LED structures. The partial light output power of nano-patterned a-plane GaN LED and low dislocation-density bulk a-plane GaN LED are almost the same for similar wavelengths at a current density of 12.7 A/cm2.

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关键词

iii-v semiconductors,current density,dislocation density,gallium compounds,light emitting diodes,nanofabrication,nanopatterning,nanorods,self-assembly,semiconductor growth,wide band gap semiconductors,gan,gan-gan,ni,a-plane light emitting diodes,blue a-plane led structure,crystalline quality,green a-plane led structure,low-dislocation-density bulk a-plane led,nanopatterned a-plane led,nanorod template regrowth,partial light output power,self-assembled nanoislands,self assembly

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