SRAM sense amplifier offset cancellation using BTI stress

Peter Beshay,Jonathan F Bolus,Travis N Blalock,Vikas Chandra,Benton H Calhoun

Subthreshold Microelectronics Conference（2012）

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摘要

Device variability in modern processes has become a major concern in SRAM design leading to degradation of both performance and yield. Variation induced offset in the sense amplifiers requires a larger bitline differential, which slows down SRAM access times. In this paper, we propose a post fabrication technique that takes advantage of the typically detrimental bias temperature instability (BTI) aging effect to improve SRAM sense amplifier offset.

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关键词

sram chips,amplifiers,integrated circuit design,bti,sram design,bias temperature instability aging effect,device variability,sense amplifier offset cancellation,sense amplifiers,bti stress,offset compensation,sram sense amplifier

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