Scaling Deep Trench Based Edram on SOI to 32nm and Beyond
2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING（2009）
关键词
DRAM chips,capacitors,embedded systems,high-k dielectric thin films,isolation technology,nanotechnology,silicon-on-insulator,SOI,deep trench capacitor,deep trench scaling,deep trench storage capacitor,eDRAM,embedded DRAM,high-¿ metal gate access transistor,high-¿ node dielectric,size 32 nm,size 45 nm
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