Mos Capacitor Deep Trench Isolation for Cmos Image Sensors

N. Ahmed,F. Roy,G-N Lu,B. Mamdy,J-P Carrere,A. Tournier,N. Virollet,C. Perrot,M. Rivoire,A. Seignard,D. Pellissier-Tanon,F. Leverd,B. Orlando

2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2014）

Cited 22|Views45

Key words

CMOS image sensors,MOS capacitors,elemental semiconductors,isolation technology,silicon,technology CAD (electronics),CDTI gate oxide thickness,CMOS image sensors,MOS capacitor deep trench isolation,Si,TCAD simulations,silicon samples

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