Electric-Field-Controlled Room Temperature AMR Switching in a NiFe/BiFeO3/SrRuO3/SrTiO3 (111) Heterostructure

Ta/NiFe/BiFeO3/SrRuO3/SrTiO3 (111) heterostructure has been fabricated by pulsed laser deposition and magnetic sputtering. The BiFeO3 film is pure and highly (111)-oriented. A typical anisotropic magnetoresistance (AMR) effect has been observed by four probes technique at room temperature. When applying an out-of-plane electric field, remarkable reverses of the AMR phase has been observed several times from about -0.015% to about +0.015% in our experiment. These results indicate that a reversible out-of-plane electric field control of magnetization in ferromagnetic layer could be achieved through multiferroic BiFeO3 at room temperature.