Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

J Lehmann, Ch Leroux,G Reimbold,Mh Charles,A Torres,E Morvan,Y Baines,Gerard Ghibaudo,Edwige Bano

Microelectronic Test Structures（2015）

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摘要

In this paper, we present a new method of sheet resistance measurement on AlGaN/GaN wafers. Such measurements are useful for an easy monitoring of AlGaN/GaN epitaxy. Measurements were obtained by adapting the four-point probe technique to AlGaN/GaN wafers. This method is used today in the 200mm GaN-on-Si fabrication line at the CEA-LETI with a standard deviation of 2% on the sheet resistance measurement.

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关键词

iii-v semiconductors,aluminium compounds,electric resistance measurement,gallium compounds,high electron mobility transistors,wide band gap semiconductors,algan-gan,cea-leti fabrication line,gan-si,hemt wafer,four-point probe technique,high electron mobility transistor,sheet resistance measurement

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