Semiconductor layer extraction techniques by SEM
Physical and Failure Analysis of Integrated Circuits（2011）
摘要
Because of a limitation of optical microscope resolution, it is difficult to extract layers of semiconductor devices with a gate size smaller than 180 nm. In this study, we have developed sample preparation methods and image stitching processes for layer extraction by an SEM. This technical development makes it possible to analyze layer information for numerous system ICs.
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关键词
image segmentation,integrated circuits,scanning electron microscopy,semiconductor devices,ic,sem,image stitching processes,sample preparation method,semiconductor device layer extraction,plasmas,films,metals,chemicals
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