10 Gbps, 530 fJ/b optical transceiver circuits in 40 nm CMOS

Frankie Liu,Dinesh Patil,Jon Lexau,Philip Amberg,Michael Dayringer,Jon Gainsley,Hesam Fathi Moghadam,Xuezhe Zheng,J E Cunningham,Ashok V Krishnamoorthy,Elad Alon,Ron Ho

VLSI Circuits（2011）

引用 57|浏览22

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摘要

This paper describes 10 Gbps optical modulator and receiver circuits designed for high energy efficiency in a 40 nm process. The transmitter consumes 135 fJ/b when bonded to an external silicon photonic ring modulator. The receiver, at -15 dBm sensitivity, consumes 395 fJ/b when bonded to an external photodiode.

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关键词

cmos integrated circuits,optical modulation,optical transceivers,photodiodes,cmos,bit rate 10 gbit/s,external photodiode,external silicon photonic ring modulator,optical modulator,optical transceiver circuits,receiver circuits,size 40 nm,calibration,synchronization,photonics,silicon

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