Extraction of Subgap Donor States in a-IGZO TFTs by Generation–Recombination Current Spectroscopy

Bae, Minkyung,Yongsik Kim,Sungchul Kim,Dong Myong Kim

Electron Device Letters, IEEE（2011）

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摘要

A physics-based generation-recombination current (JG r) spectroscopy is proposed for the extraction of the sub gap donorlike density of states (DOS) of amorphous InGaZnO thin-film transistors. Physics-based Shockley-Read-Hall recombination through the subgap DOS over the bandgap is fully considered, and the potential for the carrier concentration is calculated through the DeAOTS model. The extracted parameters for the exponential deep donorlike states are NDD = 5.5 × 1021 [cm-3 · eV-1] and kTDD = 0.115 [eV].

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关键词

carrier density,gallium compounds,indium compounds,spectroscopy,thin film transistors,deaots model,ingazno,carrier concentration,exponential deep donorlike states,physics-based shockley-read-hall recombination,physics-based generation-recombination current spectroscopy,subgap donorlike density of states,amorphous ingazno (a-igzo),generation–recombination (g–r) current,subgap donorlike density of states (dos),thin-film transistor (tft),logic gate,density of state,stress,logic gates,thin film transistor

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