RF characterization of epitaxial graphene nano-ribbon field effect transistors

Nan Meng,J Ferrer Fernandez, E Pichonat,O Lancry,D Vignaud,Gilles Dambrine,Henri Happy

Microwave Symposium Digest（2011）

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摘要

Summary form only given, as follows. RF characterization of epitaxial graphene nano ribbon field-effect transistor (GNRFET) was investigated. The few layers graphene were synthesized by thermal decomposition of {0001} silicon carbide under UHV environment. Raman spectroscopy, AFM and Hall measurement were used to investigate the properties of graphene synthesized. Despite the Hall mobility was lower than 500 cm2/Vs, the intrinsic current gain cut-off frequency of 60 GHz and maximum oscillation frequency of 30 GHz were obtained. This work shows the strong potentiality of GNRFET in future high speed electronics.

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关键词

atomic force microscopy,afm,rf characterization,transistor,rf,thermal decomposition,frequency 30 ghz,gnrfet,frequency 60 ghz,silicon carbide,field effect transistors,epitaxial graphene nanoribbon field effect transistor,graphene,ribbon,raman spectroscopy,pyrolysis,characterization,uhv environment,sic,nanoelectronics,hall measurement,radio frequency,logic gates,field effect transistor,logic gate,epitaxial growth,indexing terms,oscillations

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