Random telegraph noise in GaN-based light-emitting diodes

Random telegraph noise (RTN) having two discrete current levels was characterised in reverse current of GaN based light-emitting diodes. Through compared magnitude of the hysteresis with RTN amplitude in reverse current, it is confirmed that RTN causes the current-voltage (I-V) hysteresis. The mechanism of RTN was analysed by using a tunnelling equation. In addition, activation energy of the trap leading to RTN was characterised by analysis of the time constants with voltage and temperature.