Helium ion microscope characterization for Cu / low-k interconnects - SE imaging and focused helium ion beam luminescence detection -

S Ogawa,T Iijima,Shogo Awata,Shigeru Kakinuma,Shintaro Komatani,Toshihiko Kanayama

Interconnect Technology Conference and 2011 Materials for Advanced Metallization（2011）

引用 1|浏览3

暂无评分

摘要

Several novel imaging modes of the recently developed helium ion microscope (HIM) 1) were explored that may make the HIM a tool of particular value to Cu / low-k (dielectric constant) interconnect structures. Mechanism of the “through dielectric” (2) imaging of the Cu interconnects underneath the low-k SiOC film was proposed, and materials contrast in the low-k regions between Cu lines was imaged which might reflect damaged low-k areas. Furthermore possibility of detection of luminescence induced by the focused helium ion beam using the HIM for materials property characterizations was studied for the first time.

查看译文

关键词

integrated circuit interconnections,ion microscopes,cu/low-k interconnects,se imaging,dielectric constant,focused helium ion beam luminescence detection,helium ion microscope characterization,interconnect structures,materials property characterizations,helium,imaging,copper,dielectrics,material properties,luminescence,ion beam

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要