Improvement of RC performance for advanced ULK/Cu interconnects with CVD hybrid dielectric/metal liner

Masayoshi Tagami,C C Yang,H K Shobha,Eiichi Soda,Anita Madan,Patrick W Dehaven,Robert C Murphy,R Davis,C C Parks,S Molis,Susan L Cohen, F Ito,T Spooner

Interconnect Technology Conference and 2011 Materials for Advanced Metallization（2011）

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摘要

A CVD-hybrid dielectric/metal liner has been demonstrated by simulation and actual structure. From line resistance (R) and line capacitance (C) simulation, the CVD-hybrid liner deposited on porous ULK (k=2.2) inter layer dielectrics (ILD) is shown that it is possible to improve RC performance. The CVD-hybrid liner with CVD-SiCN and CVD-Ru shows good liner conformality, Cu diffusion barrier property and oxidation barrier property. Integration process is investigated to achieve optimum CVD-hybrid liner structure with special RIE technique. 14.6% RC performance improvement can be achieved with triple-layered ULK(k=2.2)/Cu integrated interconnect structure. The CVD-hybrid liner is a strong candidate to achieve a better RC performance for future technology nodes.

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关键词

rc circuits,capacitance,chemical vapour deposition,copper,dielectric materials,electric resistance,integrated circuit interconnections,porous materials,ruthenium compounds,silicon compounds,cvd hybrid dielectric/metal liner,cu,rc performance,rie technique,sicn,ulk/cu interconnect,diffusion barrier property,integrated interconnect structure,integration process,line capacitance,line resistance,oxidation barrier property,porous interlayer dielectrics,triple-layered ulk,dielectrics,materials,resistance

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