Passive and hybrid mode-locking from a monolithic InGaN/GaN laser diode

V F Olle,A Wonfor,L Sulmoni,P P Vasilev,J M Lamy,J F Carlin,N Grandjean,R V Penty,I H White

Lasers and Electro-Optics（2013）

引用 0|浏览9

暂无评分

摘要

We report 4ps and 8ps pulse generation from a two-section monolithic InGaN/GaN laser by hybrid and passive mode-locking, respectively. Pulse trains at a repetition rate of 28.6GHz and an emission wavelength of 422nm are generated.

查看译文

关键词

iii-v semiconductors,gallium compounds,indium compounds,laser mode locking,optical pulse generation,semiconductor lasers,wide band gap semiconductors,ingan-gan,hybrid mode-locking,monolithic ingan-gan laser diode,passive mode-locking,pulse generation,pulse trains,repetition rate,time 4 ps,time 8 ps,wavelength 422 nm,radio frequency,optical interferometry

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要