Complementing trends of photoluminescence and terahertz intensities in staggered InGaN quantum wells

Guan Sun,Ruolin Chen,Yujie J Ding,Hongping Zhao,Guangyu Liu,Jing Zhang,Nelson Tansu

Lasers and Electro-Optics（2013）

引用 24|浏览2

暂无评分

摘要

We demonstrate that photoluminescence and terahertz intensities show complementing trends for staggered InGaN quantum wells (QWs), dictated by separation of electrons and holes.

查看译文

关键词

iii-v semiconductors,gallium compounds,indium compounds,photoluminescence,semiconductor quantum wells,terahertz wave spectra,wide band gap semiconductors,ingan,electron-hole separation,staggered quantum wells,terahertz intensity,wave functions,electric fields

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要