Mapping Defect Density in MBE Grown Epitaxial Layers on Si Substrate Using Esaki Diode Valley Characteristics

Kausik Majumdar,Paul J Thomas,Weiyip Loh,Puiyee Hung, Kathleen R Matthews,D A Pawlik,Brian Romanczyk,Matthew Filmer, Ayush Gaur,R Droopad,Sean L Rommel,C Hobbs,P D Kirsch

IEEE Transactions on Electron Devices（2014）

引用 15|浏览4

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摘要

Growing good quality III-V epitaxial layers on Si substrate is of utmost importance to produce next generation high-performance devices in a cost effective way. In this paper, using physical analysis and electrical measurements of Esaki diodes, fabricated using molecular beam epitaxy grown In0.53Ga0.47As layers on Si substrate, we show that the valley current density is strongly correlated with th...

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关键词

Tunneling,Photonic band gap,Silicon,Current density,Stress,Temperature,Substrates

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