Superfluorescent 1.1 ps pulse-on-demand generation in InGaN laser
Lasers and Electro-Optics Europe（2013）
摘要
A semiconductor laser diode producing ultra-short optical pulses in the blue-violet range will find numerous applications ranging from next-generation 3D optical data storage devices to bio-medical diagnostic methods. In this communication we report generation of solitary pulses of the width below 1.1 ps from a tandem-cavity InGaN/InGaN laser diodes operating in 415-425 nm wavelength range. Solitary pulses are produced in the pulse-on-demand mode within narrow transient region between amplified spontaneous emission (ASE) and Q-switched lasing (LAS). The pulses exhibit large jitter. This regime is achieved when high negative bias -20 V was applied to the central section of the device (saturable electroabsorber) while to end sections were pumped with 1 A current pulses.
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关键词
iii-v semiconductors,q-switching,gallium compounds,indium compounds,optical pulse generation,optical pumping,optical saturable absorption,semiconductor lasers,superradiance,wide band gap semiconductors,ingan-ingan,q-switched lasing,amplified spontaneous emission,biomedical diagnostic method,blue-violet range,current 1 a,next-generation 3d optical data storage devices,saturable electroabzsorber,semiconductor laser diode,solitary pulses,superfluorescent pulse-on-demand generation,tandem-cavity laser diodes,ultrashort optical pulses,voltage -20 v,wavelength 415 nm to 425 nm,spontaneous emission,q switching
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