Invasion percolation model for abnormal TDDB characteristic of ULK dielectrics with Cu interconnect at advanced technology nodes

Reliability Physics Symposium, 2011, Pages 2F.2.1-2F.2.8.

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Abstract:

With the continuing aggressive scaling of interconnect dimensions and introduction of new lower k materials, dielectric TDDB reliability margin is greatly reduced. In this paper, a comprehensive investigation on an abnormal low-k TDDB characteristic, a systematic degradation of Weibull slopes at lower stress voltages, was conducted for Cu...More

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