Monitoring gate and interconnect delay variations by using ring oscillators

VLSI Design, Automation and Test(2011)

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摘要
With process variability increasing in advanced processes, it becomes more challenging to diagnose or debug a low-yield problem. For finding out the root causes of a low-yield problem, currently we rely on limited process data provided by foundries or diagnosis tools and physical failure analysis (PFA). Only relying on defect diagnosis analysis and PFA is not sufficient to quickly conclude with a specific process problem. For gathering more information about a process, we propose to embed a process monitor consisting of ring oscillators in a circuit. Our proposed monitor design can monitor both gate and interconnect delay variation. A comprehensive simulation has been conducted and the silicon results will be shown in this paper.
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关键词
delays,elemental semiconductors,failure analysis,integrated circuit interconnections,oscillators,process monitoring,silicon,si,defect diagnosis analysis,diagnosis tools,interconnect delay variations,low-yield problem,monitoring gate,physical failure analysis,ring oscillators,ring oscillator,metals
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