Isolation and characterization of large-area GaSb membranes grown on GaAs substrates

E J Renteria,P Ahirwar,S Clark,Orlando S Romero,S J Addamane,C P Hains,T J Rotter,L R Dawson,Olga Lavrova,L F Lester,Ganesh Balakrishnan

Photovoltaic Specialists Conference（2013）

引用 1|浏览13

暂无评分

摘要

We investigate substrate removal techniques for GaSb epilayers grown on GaAs substrates. The GaSb epilayers are grown metamorphically on the GaAs substrate by inducing large areas of 90° interfacial misfit dislocation arrays at the GaSb/GaAs interface. Three structures have been investigated, each with a different etch stop process such that the GaAs substrate is removed without affecting the GaSb epi-layer. The GaSb membranes upon isolation are characterized for crystal quality using x-ray diffraction and for surface quality using atomic force microscopy.

查看译文

关键词

iii-v semiconductors,x-ray diffraction,atomic force microscopy,dislocation arrays,etching,gallium compounds,membranes,semiconductor epitaxial layers,semiconductor growth,afm,gaas,gaas substrates,gasb,gasb epilayers,gasb-gaas interface,xrd,crystal quality,etch stop process,interfacial misfit dislocation arrays,large-area gasb membrane characterization,large-area gasb membrane isolation,substrate removal techniques,surface quality,iii-v semiconductor materials,rough surfaces,x ray diffraction,gallium arsenide,epitaxial growth,surface roughness

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要