A 16nm FinFET CMOS Technology for Mobile SoC and Computing Applications

Shien-Yang Wu,C. Y. Lin,M. C. Chiang,J. J. Liaw,J. Y. Cheng,S. H. Yang,M. Liang,T. Miyashita,C. H. Tsai,B. C. Hsu, H. Y. Chen, T. Yamamoto,S. Y. Chang,V. S. Chang,C. H. Chang,J. H. Chen,H. F. Chen,K. C. Ting, Y. K. Wu,K. H. Pan,R. F. Tsui,C. H. Yao,P. R. Chang,H. M. Lien,T. L. Lee,H. M. Lee,W. Chang,T. Chang,R. Chen,M. Yeh,C. C. Chen,Y. H. Chiu, Y. H. Chen, H. C. Huang,Y. Lu,C. W. Chang,M. H. Tsai,C. C. Liu,K. S. Chen, C. C. Kuo,H. T. Lin,S. M. Jang,Y. Ku

Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials（2014）

Cited 181|Views18

Key words

CMOS integrated circuits,MOSFET,SRAM chips,copper,integrated circuit interconnections,system-on-chip,Cu,Cu-low-k interconnect,FinFET CMOS technology,FinFET transistors,HD FinFET SRAM,HK-MG planar technology,NMOS,PMOS,computing applications,high density MiM,high density SRAM,logic density,mobile SoC,short channel control,size 16 nm,storage capacity 128 Mbit

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