High Performance UTBB FDSOI Devices Featuring 20nm Gate Length for 14nm Node and Beyond
2013 IEEE International Electron Devices Meeting（2013）
关键词
Ge-Si alloys,electrostatics,field effect transistors,silicon-on-insulator,BOX thickness,Si,Si channel NFET,SiGe,UTBB FDSOI devices,dual channel FET,electrostatics,gate length,size 20 nm,size 25 nm,strained SiGe channel PFET,ultra-thin body and box devices
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