GaN nanorods for improved light emitting diode performance

Ting-Wei Yeh,Stewart, L.,Hyung-Joon Chu,Dapkus, P.Daniel

Winter Topicals（2011）

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摘要

GaN nanorod arrays are grown by selective area growth. The exposed nonpolar planes of the nanostructures can be utilized as a potential solution to improve the efficiency of light emitting diodes.

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关键词

III-V semiconductors,MOCVD,gallium compounds,indium compounds,nanofabrication,nanorods,semiconductor growth,semiconductor quantum wells,wide band gap semiconductors,GaN,InGaN-GaN,metalorganic vapor phase deposition,nanorod arrays,nonpolar planes,selective area growth,

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