UTBB FDSOI Scaling Enablers for the 10nm Node

L. Grenouillet,Q. Liu,R. Wacquez,P. Morin,N. Loubet,D. Cooper,A. Pofelski, W. Weng, F. Bauman,M. Gribelyuk, Y. Wang,B. De Salvo,J. Gimbert,K. Cheng,Y. Le Tiec,D. Chanemougame,E. Augendre,S. Maitrejean,A. Khakifirooz,J. Kuss,R. Schulz, C. Janicki,B. Lherron,S. Guillaumet,O. Rozeau,F. Chafik, J. L. Bataillon,T. Wu,W. Kleemeier,M. Celik,O. Faynot,R. Sampson,B. Doris,M. Vinet

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)（2013）

引用 18|浏览3

关键词

field effect transistors,low-power electronics,silicon-on-insulator,UTBB FDSOI technology,performance-energy consumption trade-off,scaling enablers,size 10 nm

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