Scalable compact modeling for SiGe HBTs suitable for microwave radar applications

Steffen Lehmann,M S Weiss,Yann Zimmermann,A Pawlak,K Aufinger,Michael Schroter

Silicon Monolithic Integrated Circuits in RF Systems（2011）

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摘要

The suitability of the compact model HICUM for a state-of-the-art Silicon-Germanium (SiGe) heterojunction bipolar transistor (HBT) technology is evaluated with special emphasis on an efficient scalable modeling methodology. Multifinger HBTs particularly applicable to power applications are modeled. For modeling the critical self-heating effect a distributed thermal network is applied, yielding only a small impact on modeling results though. DC, AC, and large-signal distortion characteristics show good agreement between measurements and results from compact model simulation, demonstrating the capability of the modeling approach.

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关键词

ge-si alloys,heterojunction bipolar transistors,radar applications,semiconductor device models,hbt,sige,distributed thermal network,heterojunction bipolar transistor,microwave radar applications,scalable compact modeling,hicum,harmonics,load-pull,semiconductor device modeling,indexing terms,process design,figure of merit,cost effectiveness,high frequency

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