Performance enhancement of AlGaN/GaN based UV laser diode for short-λ optical communication
High-Capacity Optical Networks and Enabling Technologies（2010）
摘要
Qualitative optimization of the InAlN as electron-block layer (EBL) has been studied. Analytical comparisons of AlGaN and modified InAlN as EBLs have been performed. Using 2D simulation, significant improvement in the emission intensity of the designed structures with In0.18Al0.82N EBLs compared to similar with non-EBL and Al0.8Ga0.82N as EBL is observed. This enhancement can be attributed to the fact that modified EBL is more efficient in electron confinement and reduces the efficiency droop caused by carrier spillover into p-region.
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关键词
iii-v semiconductors,aluminium compounds,gallium compounds,optical communication equipment,semiconductor lasers,tunnelling,wide band gap semiconductors,2d simulation,algan-gan,uv laser diode,carrier spillover,electron confinement,electron-block layer,emission intensity,short-λ optical communication,algan,inaln,elctron-block layer(ebl),nitrigen vacancy,superlattice,tunneling barriers,superlattices,optical communication,materials,photonic band gap
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