A Study of Parasitic Series Resistance Components in In–Ga–Zn–Oxide (a-IGZO) Thin-Film Transistors

Roman I Kondratyuk,Kiju Im,Denis Stryakhilev,Chaun Gi Choi,Mugyeom Kim,Huiwon Yang,Hyehyang Park,Yeon Gon Mo,Hye Dong Kim,Sang Soo Kim

Electron Device Letters, IEEE（2011）

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摘要

We extracted the effective channel length and parasitic series resistance in a-IGZO inverted-staggered etch-stop (ES) TFTs. When there is an overlap between the drain or source electrode and the FET channel, the resistance of the channel underneath the overlapping regions is very low compared with other channel region resistance. As a result, the effective channel length is smaller than the physical length. The aforementioned definition of effective channel length in terms of device geometric parameters seems to be specific for ES a-IGZO TFTs.

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关键词

amorphous semiconductors,field effect transistors,gallium compounds,indium compounds,thin film transistors,fet channel,ingazno,device geometric parameters,drain electrode,effective channel length,inverted-staggered etch-stop thin-film transistors,parasitic series resistance components,source electrode,igzo,tft,parasitic series resistance,logic gates,indexing terms,resistance,logic gate,series resistance,thin film transistor

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