A new topology of active bandstop filters in MMIC technology for wideband applications

Leila Kamoun,Eric Kerherve,Philippe Dueme,Jeanphilippe Plaze,Balwant Godara

Microwave Symposium Digest（2013）

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摘要

A new topology of active bandstop filters is proposed in this paper. Two prototypes based on this topology have been implemented: the first one in GaN technology and the second one in GaAs technology. This topology allows reducing the 3 dB bandwidth in comparison with the only passive cell. The structure of both filters is a distributed structure. The first one allows a rejection of 65 dB at 2.9 GHz and the second one allows three states with a rejection around 45 dB at 2.3 GHz (state 1), at 2.47 GHz (state 2) and at 2.87 GHz (state 3). Both have associated passband from 1 GHz to 18 GHz.

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关键词

iii-v semiconductors,mmic,active filters,band-stop filters,gallium arsenide,microwave circuits,wide band gap semiconductors,gaas,gaas technology,gan,gan technology,mmic technology,active bandstop filter,frequency 1 ghz to 18 ghz,frequency 2.3 ghz,frequency 2.47 ghz,frequency 2.87 ghz,frequency 2.9 ghz,passive cell,wideband application,bandwidth,topology,band pass filters

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