Cycling induced degradation of a 65nm FPGA flash memory switch

Ben A Schmid,James Yingbo Jia,Jonathan Wolfman,Yu Wang,Fethi Dhaoui,Huanchung Tseng,Sungrae Kim,Kinsing Lee,Patty Liu,Kyung Joon Han,Chenming Hu

Integrated Reliability Workshop Final Report（2010）

引用 3|浏览5

暂无评分

摘要

We present a study of cycling induced degradation of a two transistor Flash memory cell with a shared floating gate. The cell directly serves as a configurable interconnection switch in a Field Programmable Gate Array (FPGA) fabricated with a 65 nm embedded-Flash process. By optimizing the poly re-oxidation, LDD implant and spacer module, the cell endurance is significantly improved at both the single cell and 1 Mbit test-array levels.

查看译文

关键词

field programmable gate arrays,flash memories,integrated circuit interconnections,oxidation,semiconductor switches,fpga flash memory switch,ldd implant,cell endurance,configurable interconnection switch,cycling induced degradation,embedded-flash process,field programmable gate array,poly re-oxidation,shared floating gate,spacer module,test-array levels,transistor flash memory cell,nonvolatile memory,switches,programming,degradation,logic gates

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要