Large signal substrate modeling in RF SOI technologies

Shyam Parthasarathy,Balaji Swaminathan,A Sundaram,Robert A Groves,Randy Wolf, Frederick G Anderson

Electron Devices Meeting（2010）

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摘要

This paper describes a large signal Silicon on Insulator (SOI) substrate modeling methodology for high power circuit applications such as RF Switches. It is shown that the use of a varactor in place of a linear capacitor representing the buried oxide (BOX) improves the harmonic predictions of the circuit. The new substrate model is validated against 2nd and 3rd harmonics of an RF SOI switch operating at 890 MHz.

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关键词

harmonic distortion,microwave switches,silicon-on-insulator,substrates,box,rf soi technology,si,buried oxide,frequency 890 mhz,harmonic prediction,high power circuit application,large signal substrate modeling,linear capacitor,silicon on insulator,semiconductor device modeling,harmonic analysis,capacitance,radio frequency

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