Nanoimprint induced electrical type conversion in HgCdTe

Mariusz Martyniuk,G A Umanamembreno,R H Sewell,R J Westerhout,C A Musca,J M Dell,J Antoszewski, L Faraone,D S Macintyre,S Thoms,C N Ironside

Optoelectronic and Microelectronic Materials and Devices（2010）

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摘要

We report supporting evidence that is consistent with p- to n-type conversion of HgCdTe that is induced by surface indentation, as the progress towards the fabrication of photovoltaic infrared detectors by direct imprinting.

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关键词

ii-vi semiconductors,cadmium compounds,infrared detectors,mercury compounds,nanolithography,photodetectors,hg1-xcdxte,nanoimprint induced electrical type conversion,photovoltaic infrared detectors,surface waves,semiconductor lasers

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