Reactive ion etching of porous silicon for MEMS applications

Meifang Lai,Parish, G.,Yinong Liu,Keating, A.J.

Optoelectronic and Microelectronic Materials and Devices（2010）

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摘要

Dry etching by inductively-coupled-plasma reactive-ion etching was performed on porous silicon. When etching with a gas mixture of CF4 and O2, the etch rates of passivated PS were higher than that of Si by a factor of up to 20. It is found that the etch rate of PS is affected by the several seconds of plasma initialisation and stabilisation time.

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关键词

elemental semiconductors,passivation,porous semiconductors,silicon,sputter etching,mems application,si,dry etching,gas mixture,inductively-coupled-plasma reactive-ion etching,passivated porous silicon,plasma initialisation time,plasma stabilisation time,porous silicon,inductive coupled plasma,argon,reactive ion etching,hafnium

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