Origin of Resonant Peaks in Plasmonic Dots-in-a-well Infrared Detectors
2010 IEEE Photinic Society's 23rd Annual Meeting（2010）
Key words
III-V semiconductors,aluminium compounds,claddings,gallium arsenide,indium compounds,infrared detectors,integrated optics,optical films,photodetectors,plasmonics,quantum well devices,semiconductor quantum dots,Al0.7Ga0.3As,InGaAs-GaAs,cladding,n-doped semiconductor,plasmonic dot-in-a-well infrared detectors,quantum dots,quantum wells
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