3-D simulation of silicon oxidation: Challenges, progress and results

Damrong Guoy,Alp H Gencer,Zhiqiang Tan,Satish Chalasani,Mark Johnson,Luis Villablanca,S S Simeonov

Simulation of Semiconductor Processes and Devices（2013）

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摘要

We report a new algorithm for solving the moving boundary problem of oxidation of silicon in 3D structures. The algorithm solves many of the boundary and mesh quality problems that makes 3D oxidation simulations challenging. Using this algorithm, we demonstrate that complicated 3D oxidation steps can be performed and results can be obtained in a reasonable amount of time.

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关键词

elemental semiconductors,oxidation,semiconductor process modelling,silicon,3d oxidation simulations,3d simulation,3d structures,si,mesh quality problems,moving boundary problem,silicon oxidation,locos,moving boundary,trench oxidation

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