Design and Performance of a Prototype Mesa-Geometry Ge-on-Si Single-Photon Avalanche Diode Detector at 1310 Nm and 1550 Nm Wavelengths
10th International Conference on Group IV Photonics（2013）
关键词
avalanche photodiodes,elemental semiconductors,germanium,optical design techniques,optical fabrication,photodetectors,prototypes,selenium,semiconductor device noise,Ge-Si,noise equivalent power,prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector,single-photon detection efficiency,wavelength 1310 nm to 1550 nm
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