Investigation on output driver with stacked devices for ESD design window engineering
Electrical Overstress/ Electrostatic Discharge Symposium(2010)
摘要
This work investigates the ESD robustness of stacked drivers in bulk and SOI technologies. The impact of stacked driver sizing and pre-driver connection is examined in detail using VF-TLP and TLP measurement. It is shown that proper pre-driver configuration can double Vt2, thereby improving I/O's It2.
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关键词
driver circuits,electrostatic discharge,silicon-on-insulator,transmission lines,esd design window engineering,soi technology,tlp measurement,vf-tlp,output driver,stacked devices,stacked driver sizing,silicon on insulator,logic gates
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