A new LNA wide band structure for MMIC applications

Microwave Conference(2010)

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摘要
This paper presents a new topology for wide band MMIC LNA. The proposed new architecture is based on a modification of the commonly used cascode cell. A 2-18 GHz MMIC LNA was designed and manufactured with the commercial PH15 UMS process. To our knowledge, the results obtained represent the new sate of art performance: the packaged die exhibits a 2.1 dB noise figure associated to a 25 dB gain and 26 dBm OIP3 level over the full 2-18 GHz range.
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关键词
mmic amplifiers,low noise amplifiers,network topology,mmic application,ph15 ums process,cascode cell,frequency 2 ghz to 18 ghz,gain 25 db,low-noise amplifier,noise figure 2.1 db,packaged die,topology,wide band mmic lna,logic gates,impedance,noise figure,gain,gallium arsenide,noise,band structure,low noise amplifier
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