Inverted thin film InGaP/GaAs tandem solar cells for CPV applications using epitaxial lift off

G J Bauhuis,P Mulder,E J Haverkamp,J J Schermer, L J Nash,D J F Fulgoni,I M Ballard,G Duggan

Photovoltaic Specialists Conference（2010）

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摘要

The epitaxial lift-off technique has been applied to dual-junction III-V solar cells grown in inverted order (subcell with highest band gap is grown first). It is shown that growing in inverse order is not trivial since both the tunnel junction and the InGaP subcell perform differently.

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关键词

iii-v semiconductors,epitaxial growth,gallium arsenide,indium compounds,semiconductor thin films,solar cells,ingap-gaas,epitaxial lift off,inverted thin film,tandem solar cells,tunnel junction,band gap,silicon,thin film

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