P-type and undoped InGaN across the entire alloy composition range

Ke Wang,Tsutomu Araki,K M Yu,T Katsuki,M Mayer,E Alarconllado,J W Ager,W Walukiewicz,Yasushi Nanishi

Lasers and Electro-Optics Pacific Rim（2013）

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摘要

We report a systematic study on undoped and Mg-doped InGaN grown by molecular beam epitaxy. Various experiments have been combined to demonstrate p-type InGaN across the entire alloy composition range.

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关键词

iii-v semiconductors,gallium compounds,indium compounds,magnesium,molecular beam epitaxial growth,semiconductor epitaxial layers,wide band gap semiconductors,ingan,ingan:mg,mg-doped ingan,alloy composition,molecular beam epitaxy,p-type ingan,undoped ingan

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