Performances of AlInN/GaN HEMTs for power applications at microwave frequencies

O Jardel,G Callet,J Dufraisse,N Sarazin,E Chartier,Tibault Reveyrand,M Oualli,D Lancereau,M A Di Forte Poisson,S Piotrowicz,E Morvan,S L Delage

Microwave Integrated Circuits Conference（2010）

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摘要

We report a comparative study on AlInN/GaN HEMTs on SiC substrates having four different processes and epitaxies. The outstanding performances of such devices will be explained thanks to intensive characterizations: pulsed-IV, [S]-parameters and load-pull at several frequencies from S to Ku bands. The measured transistors with 250nm gate lengths from different wafers delivered in cw: 10.8 W/mm with 60 % associated PAE at 3,5 GHz, 6.6 W/mm with 39% associated PAE at 10,24 GHz, and 4.2 W/mm with 43 % associated PAE at 18 GHz.

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关键词

iii-v semiconductors,s-parameters,aluminium compounds,gallium compounds,high electron mobility transistors,indium compounds,microwave field effect transistors,silicon compounds,wide band gap semiconductors,alinn-gan,sic,frequency 10.24 ghz,frequency 18 ghz,frequency 3.5 ghz,load-pull characterization,power added efficiency,pulsed-iv parameters,size 250 nm,comparative study,s parameters,logic gates

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