Development of wafer-scale graphene RF electronics

J S Moon,David J Curtis,Ming Hu,D Wong,C Mcguire,P M Campbell,Glenn G Jernigan,Joseph L Tedesco,Brenda L Vanmil,Rachael L Myersward,Charles R Eddy,D K Gaskill,J F Robinson,Mark A Fanton,P M Asbeck

Microwave Integrated Circuits Conference（2010）

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摘要

In this talk, we present state-of-the-art performance of top-gated graphene n-FETs and p-FETs fabricated with epitaxial graphene layers grown on SiC and Si substrates.

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关键词

epitaxial growth,epitaxial layers,field effect transistors,graphene,epitaxial graphene layer,p-fet,silicon substrate,top-gated graphene n-fet,wafer-scale graphene rf electronics,logic gates,gain

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