Room temperature Terahertz hot electron bolometric detector based on AlGaAs/GaAs two dimensional electron gas

Infrared Millimeter and Terahertz Waves(2010)

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摘要
In this paper, we present a hot-electron bolometric detector, which uses the nonlinearities of the heated two-dimensional electron gas medium in AlGaAs/GaAs at room temperature. The cooling process of the electrons is through the phonon-scattering mechanism. The response was measured at the 0.1-0.2 THz frequency range. The response was estimated, showing possible application of these detectors in sensing of Terahertz radiation.
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iii-v semiconductors,aluminium compounds,bolometers,cooling,electron detection,electron gas,gallium compounds,hot carriers,terahertz wave detectors,wide band gap semiconductors,algaas-gaas,frequency 0.1 thz to 0.2 thz,frequency range,phonon-scattering mechanism,room temperature terahertz hot electron bolometric detector,temperature 293 k to 298 k,terahertz radiation sensing,two-dimensional electron gas,heating,terahertz,detectors,ohmic contacts,room temperature,two dimensional electron gas,scattering,gallium arsenide
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