Highly reliable ReRAM technology with encapsulation process for 20nm and beyond

Dongjun Seong,M K Yang,Hyunsu Ju,Jung Moo Lee,Eunmi Kim,Seungjae Jung,Gun Hwan Kim,Seol Choi,Lijie Zhang,Seonggeon Park, Y S Kang,Ingyu Baek,Jungdal Choi,Hokyu Kang,Eunseung Jung

Memory Workshop（2013）

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摘要

ReRAM cell performance and reliability have been improved through process optimization. Encapsulated ReRAM cell with SiN capping layer shows excellent endurance, read disturb, and retention characteristics. We demonstrated that effective oxygen barrier encapsulation is critical for keeping ReRAM performance in an aggressively scaled technology node.

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关键词

encapsulation,integrated circuit reliability,random-access storage,silicon compounds,reram cell performance,reram technology,sin,sin capping layer,encapsulation process,oxygen barrier encapsulation,process optimization,reliability,scaled technology node,size 20 nm,resistance,oxidation,degradation

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