A study of low-frequency noise on high-k/metal gate stacks with in situ SiOx interfacial layer

Maryam Olyaei,B Gunnar Malm,Eugenio Dentoni Litta,Pererik Hellstrom,Mikael Ostling

Noise and Fluctuations（2013）

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摘要

Low-frequency noise of HfO2/TiN nMOSFETs with different SiOx interfacial layer (IL) thicknesses is presented. It is observed that chemically formed thin ILs (0.4 nm, 0.45 nm and 0.5 nm) show a noise level close to a reference thermal IL(1 nm). This is shown to relate to the dominant contribution of the high-k HfO2 traps in comparison to the IL traps. The average extracted values for effective trap densities in these wafers are Nt= 7×1018, 1×1019, 2×1019 and 4.8×1019 for thermal oxide, 0.5 nm, 0.45 nm and 0.4 nm chemical oxide wafers respectively.

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关键词

mosfet,hafnium compounds,semiconductor device noise,silicon compounds,titanium compounds,hfo2-tin-siox,il,chemical oxide wafer,effective trap density,high-k-metal gate stack,interfacial layer thickness,low-frequency noise,nmosfet,reference thermal oxide,size 0.4 nm,size 0.45 nm,size 0.5 nm,size 1 nm,chemicaloxied,high-k dielectric,interfacial layer

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