Trapping and Thermal Effects Analysis for AlGaN/GaN HEMTs by Means of TCAD Simulations
Electron Device Letters, IEEE（2013）
摘要
The aim of this letter is to gain insights into the thermal effects and trapping phenomena of AlGaN/GaN high electron mobility transistors by means of 2-D numerical simulations. Starting from experimental pulsed measurements, we study not only the gate/drain lag due to trap phenomena, but also the thermal behavior of such transistors. Actually, transient tests are useful both to analyze the self-heating effect and to characterize donor surface traps and acceptor bulk traps.
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关键词
iii-v semiconductors,aluminium compounds,electron traps,gallium compounds,high electron mobility transistors,semiconductor device measurement,semiconductor device models,technology cad (electronics),wide band gap semiconductors,2d numerical simulations,algan-gan,hemt,tcad simulations,acceptor bulk traps,experimental pulsed measurements,gate/drain lag,self-heating effect,surface traps,thermal behavior,thermal effects analysis,transient tests,trap phenomena,trapping phenomena,algan/gan high electron mobility transistors (hemts),drain lag,gate lag,thermal simulation,transient response,traps
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