Self-heat reliability considerations on Intel's 22nm Tri-Gate technology
Reliability Physics Symposium(2013)
摘要
This paper describes various measurements on self-heat performed on Intel's 22nm process technology, and outlines its reliability implications. Comparisons to thermal modeling results and analytical data show excellent matching.
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关键词
semiconductor device reliability,transistors,intel process technology,self-heat reliability considerations,size 22 nm,thermal modeling,tri-gate transistor architecture,heating,temperature measurement,logic gates
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