Workload Dependent NBTI and PBTI Analysis for a Sub-45Nm Commercial Microprocessor
Reliability Physics Symposium（2013）
关键词
ageing,circuit simulation,circuit tuning,microprocessor chips,switching circuits,transistors,NBTI analysis,PBTI analysis,commercial microprocessor,instance-based simulation flow,lifetime computational power efficiency improvement,negative bias temperature instability,one-time worst-case guardbanding approach,positive bias temperature instability,power-state workload,self-tuning optimization,size 45 nm,standard-cell library,switching-activity effect,timing degradation,transistor aging
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